?2002 fairchild semiconductor corporation rev. a2, february 2002 ksp2907a pnp epitaxial silicon transistor absolute maximum ratings t a =25 c unless otherwise noted electrical characteristics t a =25 c unless otherwise noted * pulse test: pulse width 300 s, duty cycle 2% * also available as and pn2907 symbol parameter value units v cbo collector-base voltage -60 v v ceo collector-emitter voltage -60 v v ebo emitter-base voltage -5 v i c collector current -600 ma p c collector power dissipation 625 mw t j junction temperature 150 c t stg storage temperature -55 ~ 150 c symbol parameter test condition min. typ. max. units bv cbo collector-base breakdown voltage i c = -10 a, i e =0 -60 v bv ceo * collector emitter breakdown voltage i c = -10ma, i b =0 -60 v bv ebo emitter-base breakdown voltage i e = -10 a, i c =0 -5 v i cbo collector cut-off current v cb = -50v, i e =0 -10 na h fe dc current gain i c = -0.1ma, v ce = -10v v ce = -10v, i c = -1ma, v ce = -10v , i c = -10ma v ce = -10v, *i c = -150ma v ce = -10v, *i c = -500ma 75 100 100 100 50 300 v ce (sat) * collector-emitter saturation voltage i c = -150ma, i b = -15ma i c = -500ma, i b = -50ma -0.4 -1.6 v v v be (sat) base emitter saturation voltage i c = -150ma, i b = -15ma i c = -500ma, i b = -50ma -1.3 -2.6 v v c ob output capacitance v cb = -10v, i e =0 f=1mhz 8pf f t * current gain bandwidth product i c = -50ma, v ce = -20v f=100mhz 200 mhz t on turn on time v cc = -30v, i c = -150ma i b1 = -15ma 45 ns t off turn off time v cc = -6v, i c = -150ma i b1 =i b2 = -15ma 100 ns ksp2907a general purpose transistor ? collector-emitter voltage: v ceo = 60v ? collector power dissipation: p c (max)=625mw ? refer to ksp2907 for graphs 1. emitter 2. base 3. collector to-92 1
?2002 fairchild semiconductor corporation ksp2907a rev. a2, february 2002 typical characteristics figure 1. dc current gain figure 2. collector-emitter saturation voltage base-emitter saturation voltage figure 3. output capacitance figure 4. current gain bandwidth product -1 -10 -100 -1000 10 100 1000 v ce = -10v h fe , dc current gain i c [a], collector current -1 -10 -100 -1000 -0.01 -0.1 -1 -10 v ce (sat) v be (sat) i c = 10 i b v be (sat), v ce (sat)[v], saturation voltage i c [ma], collector current -1 -10 -100 0.1 1 10 100 i e = 0 f = 1mhz c ob [pf], capacitance v cb [v], collector-base voltage -1 -10 -100 -1000 10 100 1000 v ce = -20v f t [mhz], current gain bandwidth product i c [ma], collector current
0.46 0.10 1.27typ (r2.29) 3.86max [1.27 0.20 ] 1.27typ [1.27 0.20 ] 3.60 0.20 14.47 0.40 1.02 0.10 (0.25) 4.58 0.20 4.58 +0.25 ?.15 0.38 +0.10 ?.05 0.38 +0.10 ?.05 to-92 package demensions ?2002 fairchild semiconductor corporation rev. a2, february 2002 ksp2907a dimensions in millimeters
disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: ?2002 fairchild semiconductor corporation rev. h4 trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. star*power is used under license acex? bottomless? coolfet? crossvolt ? densetrench? dome? ecospark? e 2 cmos? ensigna? fact? fact quiet series? fast ? fastr? frfet? globaloptoisolator? gto? hisec? isoplanar? littlefet? microfet? micropak? microwire? optologic? optoplanar? pacman? pop? power247? powertrench ? qfet? qs? qt optoelectronics? quiet series? slient switcher ? smart start? star*power? stealth? supersot?-3 supersot?-6 supersot?-8 syncfet? trutranslation? tinylogic? uhc? ultrafet ? vcx?
file:///h|/imaging/bitting/cpl/20020725_1/07252002_10/fair/07252002/ksp2907a.html fairchild semiconductor space space space search | parametric | cross reference space product folders and datasheets application notes space space space find products home >> find products >> space space space space products groups space analog and mixed signal discrete interface logic microcontrollers non-volatile memory optoelectronics markets and applications new products product selection and parametric search cross-reference search technical information buy products technical support my fairchild company ksp2907a pnp epitaxial silicon transistor related links request samples dotted line how to order products dotted line product change notices (pcns) dotted line support dotted line distributor and field sales representatives dotted line quality and reliability dotted line design tools contents features | applications | product status/pricing/packaging features l collector-emitter voltage : v ceo = 60v l collector dissipation: p c (max) = 625mw l refer to ksp2907 for graphs back to top applications general purpose transistor back to top space datasheet download this datasheet pdf e-mail this datasheet [e- mail] this page print version product status/pricing/packaging product product status pricing* package type leads packing method ksp2907atf full production $0.053 to-92 3 tape reel ksp2907abu full production $0.053 to-92 3 bulk KSP2907AIUTA full production $0.053 to-92 3 tape reel ksp2907ata full production $0.053 to-92 3 tape reel * 1,000 piece budgetary pricing back to top file:///h|/imaging/bitting/cpl/20020725_1/07252002_10/fair/07252002/ksp2907a.html (1 of 2) [jul-26-2002 11:37:44 am]
file:///h|/imaging/bitting/cpl/20020725_1/07252002_10/fair/07252002/ksp2907a.html space space home | find products | technical information | buy products | support | company | contact us | site index | privacy policy ? copyright 2002 fairchild semiconductor space space file:///h|/imaging/bitting/cpl/20020725_1/07252002_10/fair/07252002/ksp2907a.html (2 of 2) [jul-26-2002 11:37:44 am]
|
